Cutting-Edge Manufacturing at CCRAFT
Our state-of-the-art proprietary technology is designed to cater to both fabless companies, which are early adopters of next-generation photonic chips, and conventional silicon photonic foundries looking to enhance their platforms by integrating TFLN. It encompasses a range of advanced manufacturing capabilities, including:
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Precision TFLN Micromachining
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Multilayer Metallization
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Cladding and Layer Openings
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Device-layer undercut
These processes allow for the realization of various on-chip components and functionalities:
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Electro-Optic Modulators for fast communication.
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CMOS Compatibility for easy integration.
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Low-Loss Fiber Coupling for reliable connectivity.
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Frequency Conversion via PPLN for spectroscopy, optical and quantum computations.
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Acousto-Optic Modulation for dynamic light control.
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Efficient interfacing for hybrid and heterogeneous integration with Silicon Photonics.
Empowering PIC Designers with PDKs
We provide standardized Process Design Kits (PDKs) that streamline product development for photonic integrated circuit (PIC) designers, enabling faster design processes and comprehensive sanity checks. Our expertise guides designers through each stage of the chip design process. Additionally, our PDKs are continuously improved through regular updates, enhancing their reliability and functionality for future designs.
TFLN PIC FOUNDRY
Design Rules
Models & Statistic
Technology Layers
Process Design Kit
Wafer-scale Manufacturing

End Users

Photonic Designer















Tapeout




TFLN Chips

Driving Forces Behind Next-Generation Photonic Integrated Circuits

High Bandwidth
Supporting AI, HPC, 5G/6G, and cloud computing with ultra-fast, energy-efficient interconnects and data rates beyond 400 Gbit/s.

Large-Scale Integration
Compact, low-loss solutions with heterogeneous integration, photonic-electronic co-integration, and programmable PICs.

Low Power Consumption
Efficient systems with CMOS-level voltage operation and low-loss waveguides, versatile packaging, and minimal thermal effects.

Wide Wavelength Range
Expanding optical data links and enabling quantum computing, biosensing, and spectroscopy.

New Functionalities
Advanced features like on-chip wavelength conversion, isolators, and ultra-fast photodetectors.
TFLN: A Versatile PIC Platform for the Future

High Nonlinearity
Exceptional for efficient modulation and wavelength conversion.

Compact Footprint
Ensuring large number of components per chip area, delivers high performance in a miniaturized format.

Robustness and Reliability
Proven material in telecom for decades, ensuring durability in harsh environments with scalable integration.

Wide Transparency
Operates across a broad wavelength range, supporting telecom, quantum, and more.

Low Optical Loss
Enables large-scale on-chip circuits, delay lines, and minimizes the need for optical amplifiers.

Piezoelectric Effect
Supports photon-phonon interactions and enables various transducer applications.
Bring your system on chip

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TFLN chips revolutionize photonic integration by:
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Replacing Bulky Components: Miniaturized circuits outperform bulk lithium niobate.
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Integrated Functionality: Reducing cost and complexity by combining multiple functions.
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Scalable Solutions: Achieving superior performance in smaller, more efficient designs.
Ion-diffused bulk LN waveguide
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Small index contrast (Δn ~ 0.02)
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Large bending radii (> 2 mm)
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1 modulator in a few cm2
→ non-scalable

Etched waveguide in thin film LN
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Large index contrast (Δn > 0.7)
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Small bending radii (~ 30 um)​
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10 modulators in 0.5 cm2
→ scalable
faster and more power-efficient
Transforming Industries with TFLN PICs
TFLN technology revolutionizes photonic integration by enabling high-performance, scalable, and energy-efficient solutions across various applications. Explore how TFLN PICs are shaping the future of diverse industries.
Telecom & Datacom

TFLN EO modulators transform high-speed optical communication with data rates exceeding 400 Gbit/s, positioning them as essential for next-generation telecom and datacom systems. Their multi-wavelength and low-power operation across O-band, C-band, L-band, and S-band enhance DWDM system efficiency, supporting both short-distance intra-datacenter links and long-haul communication. CMOS integration enables compact, energy-efficient transceiver designs, ideal for high-port interconnects and rack-to-rack connectivity. Integrated EO polarization controllers and tunable filters further boost bandwidth and spectral efficiency, addressing the needs of modern high-performance networks.
Quantum Technologies

Photonic engines for atomic systems (e.g., ion trapping, atomic clocks) operating in visible and NIR wavelengths; Ultra-fast pulse generation, pure phase modulation, and low-loss performance for quantum control; Quantum communication: entangled photon pair generation, polarization control, and EO gating; Photonic quantum computing: programmable MZI meshes, cluster states, and squeezed light sources.
Sensing & Spectroscopy

Multi-wavelength operation for biomonitoring, Raman spectroscopy, and environmental monitoring; Nonlinear wavelength generation for mid-IR sensing using SHG and DFG processes; Advanced LiDAR: fast beam steering, low-power phase shifters, and multi-spectral functionality; Frequency comb generation for precision spectroscopy, including astro-combs for exoplanet detection; Opto-mechanical sensing, gyros, and evanescent field sensing using low-loss waveguides; Nonlinear photonics for metrology, OCT, holography, and other precision tools.
Microwave Photonics

Ultra-fast EO modulators for seamless microwave-to-optical signal conversion; Integrated delay lines and high-frequency filters for 5G/6G application; Low-loss waveguides for precise signal manipulation and high-frequency transmission.
High-Performance Computing (HPC) & AI

AI and HPC systems require unprecedented data transmission speeds, but current interconnect technologies have reached their fundamental limits. TFLN EO modulators address this challenge with ultrafast, low-power optical modulation and simplified electronics, enabling seamless GPU-to-GPU and node-to-node communication. Designed for next-generation AI and HPC architectures, TFLN integrates effortlessly with advanced packaging technologies such as co-packaged optics and 3D chip stacking. These innovations enable scalable, low-latency solutions that are critical for accelerating AI training, inference, and high-performance computing workloads.
Space Applications

Low-power, lightweight PICs for satellite-to-satellite, satellite-to-ground, and intra-payload communication; High-power handling for free-space communication and advanced LiDAR systems; CMOS-compatible integration for compact, deployable systems; Dielectric resilience to high temperatures, radiation, and electromagnetic interference.
Optical Computing

Wavelength conversion and generation via PPLN waveguides for optical transistors; Ultra-fast, low-power EO modulators for agile optical signal processing; High-quality delay lines and resonators for agile processor architectures; Neuromorphic computing powered by low-loss, nonlinear components; Programmable photonics with reconfigurable MZI meshes and wavelength converters.
5G/6G & IoT

High-frequency EO modulators enable low-latency, high-bandwidth data transfer; Energy-efficient, low-power components ensure sustainable IoT operation; Multi-wavelength DWDM for compact, scalable IoT networks; Robust, CMOS-compatible designs for edge and smart device integration.
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Lithium niobate photonics: Unlocking the electromagnetic spectrum
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Photonic Crystal Cavity IQ Modulators in Thin-Film Lithium Niobate
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An integrated photonic engine for programmable atomic control
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Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages
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Design rules for frequency conversion in periodically poled thin film lithium niobate waveguides
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Broadband electro-optic frequency comb generation in a lithium niobate microring resonator
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Ultralow Voltage Folded Electro-Optical Modulators in Thin-Film Lithium Niobate Foundry Process
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​Stable and compact RF-to-optical link using lithium niobate on insulator waveguides​​​​​​